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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR C Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. Complementary to 2N3904C. L 1 2 3 F H A FEATURES N K D E G F M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -200 -50 625 1.5 150 -55 150 UNIT V V V mA mA mW W TO-92 1994. 2. 28 Revision No : 0 1/2 2N3906C ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=-5V, IC=-0.1mA, Rg=1k , f=10Hz 15.7kHz Vout V in 275 TEST CONDITION VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VBE=-0.5V, IC=0, f=1MHz MIN. -40 -40 -5.0 60 80 100 60 30 -0.65 250 2.0 TYP. - MAX. -50 -50 300 -0.25 -0.4 -0.85 -0.95 4.5 10 12 10 400 60 4.0 UNIT nA nA V V V V Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure * V MHz pF pF k x10-4 VCE=-10V, IC=-1mA, f=1kHz 1.0 100 3.0 - dB Delay Time td 10k C Total 4pF - - 35 Rise Time Switching Time Storage Time tr 0.5V -10.6V 300ns VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 35 nS Vout V in 275 tstg 10k 1N916 or equiv. C Total 4pF - 225 Fall Time tf 9.1V -10.9V 20s VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 75 * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1994. 2. 28 Revision No : 0 2/2 |
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